BLP10H605:宽带LDMOS驱动器晶体管

5 W塑料LDMOS功率晶体管,适合于频率范围为HF至1400 MHz的广播发射器和ISM应用。

特性和优势
    • 轻松控制功率
    • 集成式双侧ESD保护
    • 出色的耐用性
    • 高效
    • 极佳的热稳定性
    • 专为宽带应用设计(HF至1400 MHz)
    • 符合欧盟2002/95/EC危害性物质限制(RoHS)指令
应用
    • 工业、科学和医疗应用
    • 广播发射器应用
产品图片
关键参数
SymbolParameterConditionsMinTyp/NomMaxUnit
frangefrequency range101400MHz
PL(1dB)nominal output power at 1 dB gain compression5W
Gppower gainPL = 5 W; VDS = 50 V20.222.427.4dB
ηDdrain efficiencyPL = 5 W; VDS = 50 V; f = 860 MHz; IDq = 30 mA5759.6%
封装与包装
型号封装Outline versionReflow-/Wave soldering包装产品状态标示可订购的器件编号, (订购码 (12NC))
BLP10H605
HVSON12
(SOT1352-1)
sot1352-1_posot1352-1_frReel 7" Q1/T1 in DryPack, SmallPack量产Standard MarkingBLP10H605AZ( 9340 682 14531 )
Reel 7" Q1/T1 in Drypack量产Standard MarkingBLP10H605Z( 9340 682 14515 )
引脚配置信息
PinSymbolDescription外形简图图形符号
1n.c.not connected
2GATE1gate1
3n.c.not connected
4n.c.not connected
5GATE2gate2
6n.c.not connected
7n.c.not connected
8DRAIN2drain2
9n.c.not connected
10n.c.not connected
11DRAIN1drain1
12n.c.not connected
13SOURCEsource
无铅环保信息
型号可订购的器件编号RoHS / RHF无铅转换日期潮湿敏感度等级MSL LF
BLP10H605BLP10H605AZAlways Pb-free33
BLP10H605BLP10H605Zweek 18, 201433
文档资料
档案名称标题类型格式日期
BLP10H605 (中文)Broadband LDMOS driver transistorData sheetpdf2014-10-02
AN10896Mounting and Soldering of RF transistorsApplication notepdf2015-03-24
AN11520Life-time requirements of NXP Semiconductors HVSON12 plastic driversApplication notepdf2014-04-04
PCB_Design_BLP10H605_Data-sheetPCB Design BLP10H605 (Data sheet)Design supportzip2014-09-01
fatigue_in_aluminum_bond_wiresFatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
NXP_RF_manual_19th_editionRF Manual 19th edition: Application and design manual for High Performance RF products May 2015Other typepdf2015-05-19
RFPower_Longevity_OverviewRF Power Longevity OverviewOther typepdf2014-09-09
NXP_RFpower_Lib_V09p0RF Power Model Library for Microwave Office®Simulation modelzip2014-11-11
NXP_RFpower_Manual_MWO_20141111RF Power Model Library Manual and Installation Instructions for Microwave Office®Simulation modelpdf2014-11-11
NXP_RFPower_Simulation_ExampleRF Power Simulation Example for Microwave Office®Simulation modelzip2012-06-11
sot1352-1_poplastic thermal enhanced very thin small outline package; no leads; 12 terminalsOutline drawingpdf2013-03-27
sot1352-1_frFootprint for reflow soldering SOT1352-1Reflow solderingpdf2013-06-05
订购信息
型号订购码 (12NC)可订购的器件编号
BLP10H6059340 682 14531BLP10H605AZ
BLP10H6059340 682 14515BLP10H605Z
模型
标题类型日期
RF Power Model Library for Microwave Office®Simulation model2014-11-11
RF Power Model Library Manual and Installation Instructions for Microwave Office®Simulation model2014-11-11
RF Power Simulation Example for Microwave Office®Simulation model2012-06-11
其它
标题类型日期
PCB Design BLP10H605 (Data sheet)Design support2014-09-01
Broadband LDMOS driver transistor BLP10H605
Mounting and Soldering of RF transistors aerospace_defense
Life-time requirements of NXP Semiconductors HVSON12 plastic drivers BLP10H610
Fatigue in aluminum bond wires gan_devices
RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
RF Power Longevity Overview gan_devices
plastic thermal enhanced very thin small outline package; no leads; 12 terminals BLP10H610
Footprint for reflow soldering SOT1352-1 BLP10H610
RF Power Model Library for Microwave Office® CLF1G0060_S_30
RF Power Model Library Manual and Installation Instructions for Microwave Office® CLF1G0060_S_30
RF Power Simulation Example for Microwave Office® CLF1G0060_S_30
PCB Design BLP10H605 (Data sheet) BLP10H605