PBSS5330PA: 30 V，3 A PNP低VCEsat (BISS)晶体管
PNP低VCEsat突破性小信号(BISS)晶体管，采用超薄SOT1061无引脚小型表面贴装器件(SMD)塑料封装，具有中等功率能力。
NPN补充产品：PBSS4330PA。
Outline 3d SOT1061
数据手册 (1)
| 名称/描述 | Modified Date |
|---|---|
| 30 V, 3 A PNP low VCEsat (BISS) transistor (REV 2.0) PDF (218.0 kB) PBSS5330PA [English] | 07 Apr 2015 |
应用说明 (3)
| 名称/描述 | Modified Date |
|---|---|
| Next generation of NXP® low VCEsat transistors: improved technology for discrete semiconductors (REV 3.0) PDF (1.3 MB) AN11045 [English] | 04 Mar 2013 |
| Thermal behavior of small-signal discretes on multilayer PCBs (REV 1.0) PDF (211.0 kB) AN11076 [English] | 12 Jul 2011 |
| Protecting charger interfaces and typical battery charging topologies with external bypass transistors (REV 2.0) PDF (204.0 kB) AN10910 [English] | 01 Jul 2011 |
手册 (2)
| 名称/描述 | Modified Date |
|---|---|
| 适用于便携设备和移动电话... (REV 1.0) PDF (4.9 MB) 939775017444_ZH [English] | 28 Oct 2013 |
| Discretes for portable devices and mobile handsets (REV 1.1) PDF (3.9 MB) 939775017444 [English] | 04 Sep 2013 |
封装信息 (1)
| 名称/描述 | Modified Date |
|---|---|
| DFN2020-3: plastic thermal enhanced ultra thin small outline package; no leads; 3 terminals; body 2 x 2 x 0.65 mm (REV 1.0) PDF (185.0 kB) SOT1061 [English] | 08 Feb 2016 |
包装 (2)
| 名称/描述 | Modified Date |
|---|---|
| DFN2020-3; reel pack; standard product orientation; 12NC ending 115 (REV 1.0) PDF (261.0 kB) SOT1061_115 [English] | 07 Nov 2012 |
| DFN2020-3; Standard orientation; 12NC ending 135 (REV 1.0) PDF (261.0 kB) SOT1061_135 [English] | 07 Nov 2012 |
可靠性与质量信息 (1)
| 名称/描述 | Modified Date |
|---|---|
| PBSS5330PA NXP Product Quality (REV 1.2) PDF (74.0 kB) PBSS5330PA_NXP_PRODUCT_QUALITY [English] | 31 Jan 2015 |
支持信息 (1)
| 名称/描述 | Modified Date |
|---|---|
| Reflow Soldering Profile (REV 1.0) PDF (34.0 kB) REFLOW_SOLDERING_PROFILE [English] | 30 Sep 2013 |
SPICE
- PBSS5330PA SPICE model (REV 1.4) prm PBSS5330PA_1 7/22/2012
订购信息
| 型号 | 状态 | Package version | Package name | 大小 (mm) | transistor polarity | Transistor polarity | number of transistors | Ptot [max] (mW) | VCEO [max] (V) | IC [max] (A) | ICM [max] (A) | hFE [min] | hFE [typ] | fT [min] (MHz) | fT [typ] (MHz) | RCEsat [typ] (mΩ) | RCEsat [max] (mΩ) | VCEsat [max] (mV) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PBSS5330PA | Active | SOT1061 | DFN2020-3 | 2 x 2 x 0.65 | PNP | 1 | 2100 | -30 | -3 | -5 | 200 | 320 | 100 | 165 | 75 | 107 | -320 |
封装环保信息
| 产品编号 | 封装说明 | Outline Version | 回流/波峰焊接 | 包装 | 产品状态 | 部件编号订购码 (12NC) | Marking | 化学成分 | RoHS / 无铅 / RHF | 无铅转换日期 | EFR | IFR(FIT) | MTBF（小时） | MSL | MSL LF |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PBSS5330PA | | SOT1061 | Reflow_Soldering_Profile | Reel 11¼" Q1/T1 in LargePack | Active | PBSS5330PA,135 (9340 642 73135) | AJ | PBSS5330PA |    | Always Pb-free | 153.0 | 0.71 | 1.41E9 | 1 | 1 |
| Reel 7" Q1/T1 | Active | PBSS5330PA,115 (9340 642 73115) | AJ | PBSS5330PA | | Always Pb-free | 153.0 | 0.71 | 1.41E9 | 1 | 1 |
- 30 V, 3 A PNP low VCEsat (BISS) transistor PBSS5330PA
- Next generation of NXP® low VCEsat transistors: improved technology for discrete semiconductors PBSS4041SPN
- Thermal behavior of small-signal discretes on multilayer PCBs PBSS9110Z
- Protecting charger interfaces and typical battery charging topologies with external bypass transistors prtr5v0u2f
- 适用于便携设备和移动电话... ptvsxs1ur_automotive
- Discretes for portable devices and mobile handsets ptvsxs1ur_automotive
- PBSS5330PA NXP Product Quality PBSS5330PA
- PBSS5330PA SPICE model PBSS5330PA
- DFN2020-3: plastic thermal enhanced ultra thin small outline package; no leads; 3 terminals; body 2 x 2 x 0.65 mm PMEG6020EPA
- Reflow_Soldering_Profile Wave_Soldering_Profile LPC1112FD20
- DFN2020-3; Standard orientation; 12NC ending 135 PMEG6020EPA
- DFN2020-3; reel pack; standard product orientation; 12NC ending 115 PMEG6020EPA
- PTVSXU1UPA_SERIES
