PSMN6R3-120ES: N沟道120 V 6.7 mΩ标准电平MOSFET，采用I2PAK封装
标准电平N沟道MOSFET，采用I2PAK封装，额定工作温度为175 °C。该产品设计适用于各种工业、通信及家用电源设备。
SOT226
数据手册 (1)
| 名称/描述 | Modified Date |
|---|---|
| Trench 6 (SOT226) (IMPULSE) (REV 1.1) PDF (253.0 kB) PSMN6R3-120ES [English] | 27 Feb 2014 |
应用说明 (6)
| 名称/描述 | Modified Date |
|---|---|
| Using power MOSFETs in parallel (REV 1.0) PDF (184.0 kB) AN11599 [English] | 13 Jul 2016 |
| LFPAK MOSFET thermal design guide - Part 2 (REV 2.0) PDF (2.6 MB) AN11113_ZH [English] | 22 May 2014 |
| Using RC Thermal Models (REV 2.0) PDF (1.0 MB) AN11261 [English] | 19 May 2014 |
| LFPAK MOSFET thermal design guide, Chinese version (REV 1.0) PDF (515.0 kB) AN10874_ZH [English] | 14 Sep 2012 |
| LFPAK MOSFET thermal design guide - Part 2 (REV 2.0) PDF (2.5 MB) AN11113 [English] | 16 Nov 2011 |
| LFPAK MOSFET thermal design guide (REV 2.0) PDF (401.0 kB) AN10874 [English] | 27 Jan 2011 |
手册 (1)
| 名称/描述 | Modified Date |
|---|---|
| Ultra-reliable LFPAK56 and LFPAK33 (REV 1.0) PDF (4.4 MB) 75017659 [English] | 18 May 2015 |
选型工具指南 (2)
| 名称/描述 | Modified Date |
|---|---|
| Discretes Semiconductors Selection Guide 2016 (REV 1.0) PDF (47.9 MB) 75017631 [English] | 17 Feb 2016 |
| NXP®'s Power MOSFET Selection Guide 2014: Smaller, faster, cooler (REV 1.0) PDF (6.2 MB) 75017590 [English] | 11 Sep 2014 |
封装信息 (1)
| 名称/描述 | Modified Date |
|---|---|
| plastic single-ended package (I2PAK); TO-262 (REV 1.0) PDF (173.0 kB) SOT226 [English] | 08 Feb 2016 |
支持信息 (1)
| 名称/描述 | Modified Date |
|---|---|
| Power MOSFET frequently asked questions and answers (REV 1.0) PDF (1.1 MB) TN00008 [English] | 07 Aug 2015 |
SPICE
- PSMN6R3-120ES Spice model (REV 1.0) lib PSMN6R3-120ES_1 5/21/2013
Thermal model
- PSMN6R3-120ES Thermal model (REV 1.0) pdml PSMN6R3-120ES_1_2 5/21/2013
订购信息
| 型号 | 状态 | Package version | Package name | Channel type | Number of transistors | VDS [max] (V) | RDSon [max] @ VGS = 5 V (mΩ) | RDSon [max] @ VGS = 10 V (mΩ) | RDSon [max] @ VGS = 4.5 V (mΩ) | RDSon [max] @ VGS = 2.5 V (mΩ) | QGD [typ] (nC) | Tj [max] (°C) | QG(tot) [typ] (nC) | ID [max] (A) | Qr [typ] (nC) | QG(tot) [typ] @ VGS = 4.5 V (nC) | VGSth [typ] (V) | Automotive qualified | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | Ciss [typ] (pF) | Coss [typ] (pF) | 日期 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PSMN6R3-120ES | Active | SOT226 | I2PAK | N | 1 | 120 | 6.7 | 61.9 | 175 | 207.1 | 70 | 264.2 | 3 | N | 207.1 | 405 | 11384 | 534 | 2013-05-02 |
封装环保信息
| 产品编号 | 封装说明 | Outline Version | 回流/波峰焊接 | 包装 | 产品状态 | 部件编号订购码 (12NC) | Marking | 化学成分 | RoHS / 无铅 / RHF | MSL | MSL LF |
|---|---|---|---|---|---|---|---|---|---|---|---|
| PSMN6R3-120ES | | SOT226 | Horizontal, Rail Pack | Active | PSMN6R3-120ESQ (9340 678 56127) | PSMN6R3-120ES | PSMN6R3-120ES |   | NA | NA |
- Trench 6 (SOT226) (IMPULSE) PSMN6R3-120ES
- Using power MOSFETs in parallel BUK7M12-60E
- LFPAK MOSFET thermal design guide - Part 2 BUK7K8R7-40E
- Using RC Thermal Models BUK7M12-60E
- LFPAK MOSFET thermal design guide, Chinese version BUK7K8R7-40E
- LFPAK MOSFET thermal design guide - Part 2 BUK7M12-60E
- LFPAK MOSFET thermal design guide BUK7M12-60E
- Ultra-reliable LFPAK56 and LFPAK33 BUK7M12-60E
- Discretes Semiconductors Selection Guide 2016 BUK7M12-60E
- NXP®'s Power MOSFET Selection Guide 2014: Smaller, faster, cooler BSS84AKW
- Power MOSFET frequently asked questions and answers BUK7M12-60E
- PSMN6R3-120ES Spice model PSMN6R3-120ES
- PSMN6R3-120ES Thermal model PSMN6R3-120ES
- plastic single-ended package (I2PAK); TO-262 BUK7E8R3-40E
- PSMN8R5-100ES
