2N3055: 15 A, 60 V NPN Bipolar Power Transistor
The PNP Bipolar Power Transistor is designed for use in high power amplifier and switching amplifier applications. The 2N3055 (NPN) and MJ2955 (PNP)are complementary devices.
特性- DC Current Gain - hFE = 20-70 @ IC = 4 Adc
- Collector-Emitter Saturation Voltage - VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc
- Excellent Safe Operating Area
- Pb-Free Packages are Available
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封装
仿真模型 (4)
封装图纸 (1)
数据表 (1)
产品订购型号
| 产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| 2N3055G | Active | Pb-free | TO-204-2 | 1-07 | NA | Tray Foam | 100 | $1.008 |
订购产品技术参数
| Product | Polarity | Type | VCE(sat) Max (V) | IC Continuous (A) | V(BR)CEO Min (V) | hFE Min | hFE Max | fT Min (MHz) | PTM Max (W) |
|---|
| 2N3055G | NPN | General Purpose | 3
1.1 | 15 | 60 | 20 | 70 | 2.5 | 115 |
