BD810: High Power PNP BipolarTransistor
The High Power NPN Bipolar Power Transistor is designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.
特性- DC Current Gain - hFE = 30 (Min) @ IC = 2.0 Adc
- Pb-Free Packages are Available
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封装
仿真模型 (4)
封装图纸 (1)
数据表 (1)
产品订购型号
| 产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| BD810G | Active | Pb-free | TO-220-3 | 221A-09 | NA | Tube | 50 | $0.5933 |
| BD810 | Last Shipments | | TO-220-3 | 221A-09 | NA | Tube | 50 | |
订购产品技术参数
| Product | Polarity | Type | VCE(sat) Max (V) | IC Continuous (A) | V(BR)CEO Min (V) | hFE Min | hFE Max | fT Min (MHz) | PTM Max (W) |
|---|
| BD810G | PNP | General Purpose | | 10 | 80 | 30 | - | 1.5 | 90 |
