BDX53C: Medium Power NPN Darlington Bipolar Power Transistor
The 8 A, 100 V, 65 W PNP Darlington Bipolar Power Transistor is designed for general purpose and low speed switching applications. The BDX53B, BDX53C, BDX54B and BDX54C are complementary devices.
特性- High DC Current Gain hFE = 2500 (Typ) @ IC = 4.0 Adc
- Collector Emitter Sustaining Voltage @ 100 mAdcVCEO(sus) = 80 Vdc (Min) BDX53B, 54B VCEO(sus) = 100 Vdc (Min) - BDX53C, 54C
- Low Collector-Emitter Saturation VoltageVCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 AdcVCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc
- Monolithic Construction with Built-In Base-Emitter Shunt Resistors
- TO-220AB Compact Package
- Pb-Free Packages are Available
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封装
仿真模型 (4)
封装图纸 (1)
数据表 (1)
产品订购型号
| 产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| BDX53CG | Active | Pb-free | TO-220-3 | 221A-09 | NA | Tube | 50 | $0.4307 |
| BDX53C | Last Shipments | | TO-220-3 | 221A-09 | NA | Tube | 50 | |
订购产品技术参数
| Product | Polarity | IC Continuous (A) | V(BR)CEO Min (V) | VCE(sat) Max (V) | hFE Min (k) | hFE Max (k) | fT Min (MHz) |
|---|
| BDX53CG | NPN | 8 | 100 | 2 | 0.75 | - | - |
