MJ11012: 30 A, 60 V NPN Darlington Bipolar Power Transistor _ BDTIC 中国领先电子元器件代理商

MJ11012: 30 A, 60 V NPN Darlington Bipolar Power Transistor

The NPN Darlington Bipolar Power Transistor is designed for use as output devices in complementary general purpose amplifier applications. The MJ11015 (PNP); MJ11012 and MJ11016 (NPN) are complementary devices.

特性

High DC Current Gain - hFE = 1000 (Min) @ IC - 20 Adc
Monolithic Construction with Built-in Base Emitter Shunt Resistor
Junction Temperature to +200°C

仿真模型 (4)

Document Title	Document ID/Size	Revision	Revision Date
PSpice Model	MJ11012.LIB (1.0kB)	0
Saber Model	MJ11012.SIN (1.0kB)	0
Spice2 Model	MJ11012.SP2 (1.0kB)	0
Spice3 Model	MJ11012.SP3 (1.0kB)	0

封装图纸 (1)

Document Title	Document ID/Size	Revision
TO-204 (TO-3)	1-07 (32kB)	Z

数据表 (1)

Document Title	Document ID/Size	Revision	Revision Date
High-Current Complementary Silicon Transistors	MJ11012/D (115.0kB)	5

产品订购型号

产品	状况	Compliance	封装		MSL*	容器		预算价格 (1千个数量的单价）
MJ11012G	Active	Pb-free	TO-204-2	1-07	NA	Tray Foam	100	$2.2493

订购产品技术参数

Product	Polarity	IC Continuous (A)	V(BR)CEO Min (V)	VCE(sat) Max (V)	hFE Min (k)	hFE Max (k)	fT Min (MHz)
MJ11012G	NPN	30	60	3	1	-	4

High-Current Complementary Silicon Transistors (115.0kB) MJ11016

PSpice Model MJ11012

Saber Model MJ11012

Spice2 Model MJ11012

Spice3 Model MJ11012

TO-204 (TO-3) 2N6341

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