MJ11015:30 A, 120 V PNP Darlington Bipolar Power Transistor
The NPN Darlington Bipolar Power Transistor is designed for use as output devices in complementary general purpose amplifier applications. The MJ11015 (PNP); MJ11012 and MJ11016 (NPN) are complementary devices.
技术特性
- High DC Current Gain - hFE = 1000 (Min) @ IC - 20 Adc
- Monolithic Construction with Built-in Base Emitter Shunt Resistor
- Junction Temperature to +200°C
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封装图 PACKAGE DIMENSIONS
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订购信息 Ordering Information
| 产品 |
状况 |
Compliance |
具体说明 |
封装 |
MSL* |
容器 |
预算价格 (1千个数量的单价） |
| 类型 |
外形 |
类型 |
数量 |
| MJ11015G |
Active |
Pb-free |
30 A, 120 V PNP Darlington Bipolar Power Transistor |
TO-204-2 |
1-07 |
|
Tray Foam |
100 |
$2.0879 |
数据资料DataSheet下载
