MJD112:2.0 A, 100 V NPN Darlington Bipolar Power Transistor
The Darlington Bipolar Power Transistor is designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. The MJD112 (NPN) and MJD117 (PNP) are complementary devices.
技术特性
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封装图 PACKAGE DIMENSIONS
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订购信息 Ordering Information
| 产品 |
状况 |
Compliance |
具体说明 |
封装 |
MSL* |
容器 |
预算价格 (1千个数量的单价） |
| 类型 |
外形 |
类型 |
数量 |
| MJD112T4G |
Active |
| AEC Qualified |
| Pb-free |
| Halide free |
|
2.0 A, 100 V NPN Darlington Bipolar Power Transistor |
D2PAK-3 |
418B-04 |
1 |
Tape and Reel |
800 |
$1.0666 |
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