MJD3055: 10 A, 60 V NPN Bipolar Power Transistor
The Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The MJD2955 (PNP) and MJD3055 (NPN) are complementary devices.
特性- Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
- Straight Lead Version in Plastic Sleeves ("-1" Suffix)
- Lead Formed Version Available in 16 mm Tape and Reel ("T4" Suffix)
- Electrically Similar to MJE2955 and MJE3055
- DC Current Gain Specified to 10 Amperes
- High Current Gain-Bandwidth Product fT = 2.0 MHz (Min) @ IC = 500 mAdc
- NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
- These are PbFree Packages
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封装
仿真模型 (4)
封装图纸 (1)
数据表 (1)
产品订购型号
产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价) |
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MJD3055G | Last Shipments | AEC Qualified
Pb-free
Halide free | DPAK-3 | 369C | 1 | Tube | 75 | |
MJD3055T4G | Active | Pb-free
Halide free | DPAK-3 | 369C | 1 | Tape and Reel | 2500 | $0.32 |
NJVMJD3055T4G | Active | AEC Qualified
PPAP Capable
Pb-free
Halide free | DPAK-3 | 369C | 1 | Tape and Reel | 2500 | $0.352 |
MJD3055 | Obsolete | | DPAK-3 | 369C | 1 | Tube | 75 | |
MJD3055T4 | Obsolete | | DPAK-3 | 369C | 1 | Tape and Reel | 2500 | |
订购产品技术参数
Product | Polarity | Type | VCE(sat) Max (V) | IC Continuous (A) | V(BR)CEO Min (V) | hFE Min | hFE Max | fT Min (MHz) | PTM Max (W) |
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MJD3055T4G | NPN | General Purpose | | 10 | 60 | 20 | 100 | 2 | 20 |
NJVMJD3055T4G | NPN | General Purpose | | 10 | 60 | 20 | 100 | 2 | 20 |