The Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The MJD31, MJD31C (NPN); and MJD32, MJD32C (PNP) are complementary devices.
特性
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Document Title | Document ID/Size | Revision | Revision Date |
---|---|---|---|
PSpice Model | MJD32T4.LIB (0.0kB) | 0 | |
Saber Model | MJD32T4.SIN (1.0kB) | 0 | |
Spice2 Model | MJD32T4.SP2 (0.0kB) | 0 | |
Spice3 Model | MJD32T4.SP3 (0.0kB) | 0 |
Document Title | Document ID/Size | Revision |
---|---|---|
DPAK (SINGLE GAUGE) TO-252 | 369C (34.6kB) | F |
Document Title | Document ID/Size | Revision | Revision Date |
---|---|---|---|
Complementary Power Transistors | MJD31/D (95kB) | 16 |
产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价) | ||
---|---|---|---|---|---|---|---|---|
MJD32RLG | Active | AEC Qualified Pb-free Halide free | DPAK-3 | 369C | 1 | Tape and Reel | 1800 | $0.2288 |
MJD32T4G | Active | Pb-free Halide free | DPAK-3 | 369C | 1 | Tape and Reel | 2500 | $0.1853 |
NJVMJD32T4G | Active | AEC Qualified PPAP Capable Pb-free Halide free | DPAK-3 | 369C | 1 | Tape and Reel | 2500 | $0.22 |
Product | Polarity | Type | VCE(sat) Max (V) | IC Continuous (A) | V(BR)CEO Min (V) | hFE Min | hFE Max | fT Min (MHz) | PTM Max (W) |
---|---|---|---|---|---|---|---|---|---|
MJD32RLG | PNP | General Purpose | 3 | 40 | 10 | 50 | 3 | 15 | |
MJD32T4G | PNP | General Purpose | 3 | 40 | 10 | 50 | 3 | 15 | |
NJVMJD32T4G | PNP | General Purpose | 3 | 40 | 10 | 50 | 3 | 15 |