MJD5731: 1.0 A, 350 V High Voltage PNP Bipolar Power Transistor

The High Voltage Bipolar PNP Power Transistor is designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching applications.

特性
  • 350 V (Min) Vceo(sus)
  • 1.0 A Rated Collector Current
  • PNP Complement to the MJD47-50 Series
  • These Devices are Pb-Free and are RoHS Compliant
封装
仿真模型 (4)
Document TitleDocument ID/SizeRevisionRevision Date
PSpice ModelMJD5731T4.LIB (0.0kB)0
Saber ModelMJD5731T4.SIN (1.0kB)0
Spice2 ModelMJD5731T4.SP2 (0.0kB)0
Spice3 ModelMJD5731T4.SP3 (0.0kB)0
封装图纸 (1)
Document TitleDocument ID/SizeRevision
DPAK (SINGLE GAUGE) TO-252369C (34.6kB)F
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
High Voltage PNP Power TransistorMJD5731/D (128.0kB)5
产品订购型号
产品状况Compliance封装MSL*容器预算价格 (1千个数量的单价)
MJD5731T4GActivePb-free Halide freeDPAK-3369C1Tape and Reel2500$0.3051
MJD5731T4Last ShipmentsDPAK-3369C1Tape and Reel2500
订购产品技术参数
ProductPolarityTypeVCE(sat) Max (V)IC Continuous (A)V(BR)CEO Min (V)hFE MinhFE MaxfT Min (MHz)PTM Max (W)
MJD5731T4GPNPGeneral Purpose1350301751015
High Voltage PNP Power Transistor (128.0kB) MJD5731
PSpice Model MJD5731
Saber Model MJD5731
Spice2 Model MJD5731
Spice3 Model MJD5731
DPAK (SINGLE GAUGE) TO-252 NCV8408