MJE5851: 8.0 A, 350 V PNP Bipolar Power Transistor _ BDTIC 中国领先电子元器件代理商

MJE5851: 8.0 A, 350 V PNP Bipolar Power Transistor

The MJE5850, MJE5851 and the MJE5852 transistors are designed for high voltage, high speed, power switching in inductive circuits where fall time is critical.

特性

Pb-Free Packages are Available

应用

Switching Regulators
Inverters
Solenoid and Relay Drivers
Motor Controls
Deflection Circuits

封装

MJE5851 封装

仿真模型 (4)

Document Title	Document ID/Size	Revision	Revision Date
PSpice Model	MJE5851.LIB (0.0kB)	0
Saber Model	MJE5851.SIN (1.0kB)	0
Spice2 Model	MJE5851.SP2 (0.0kB)	0
Spice3 Model	MJE5851.SP3 (0.0kB)	0

封装图纸 (1)

Document Title	Document ID/Size	Revision
TO-220 3 LEAD STANDARD	221A-09 (30.9kB)	AH

数据表 (1)

Document Title	Document ID/Size	Revision	Revision Date
Switch-mode Series PNP Silicon Power Transistors	MJE5850/D (98kB)	7

产品订购型号

产品	状况	Compliance	封装		MSL*	容器		预算价格 (1千个数量的单价）
MJE5851G	Active	Pb-free	TO-220-3	221A-09	NA	Tube	50	$2.0
MJE5851	Last Shipments		TO-220-3	221A-09	NA	Tube	50

订购产品技术参数

Product	Polarity	Type	VCE(sat) Max (V)	IC Continuous (A)	V(BR)CEO Min (V)	hFE Min	hFE Max	fT Min (MHz)	PTM Max (W)
MJE5851G	PNP	General Purpose		8	350	15	-	-	80

Switch-mode Series PNP Silicon Power Transistors (98kB) MJE5852

PSpice Model MJE5851

Saber Model MJE5851

Spice2 Model MJE5851

Spice3 Model MJE5851

TO-220 3 LEAD STANDARD NTP6412AN

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