MJE5851:8.0 A, 350 V PNP Bipolar Power Transistor
The MJE5850, MJE5851 and the MJE5852 transistors are designed for high voltage, high speed, power switching in inductive circuits where fall time is critical.
技术特性
- Pb-Free Packages are Available
|
封装图 PACKAGE DIMENSIONS
|
订购信息 Ordering Information
| 产品 |
状况 |
Compliance |
具体说明 |
封装 |
MSL* |
容器 |
预算价格 (1千个数量的单价） |
| 类型 |
外形 |
类型 |
数量 |
| MJE5851G |
Active |
|
8.0 A, 350 V PNP Bipolar Power Transistor |
TO-220-3 |
221A-09 |
|
Tube |
50 |
$2.0 |
| MJE5851 |
Last Shipments |
|
8.0 A, 350 V PNP Bipolar Power Transistor |
TO-220-3 |
221A-09 |
|
Tube |
50 |
|
数据资料DataSheet下载
