NVD4856N: Power MOSFET 25V, 89A, 4.7 mOhm, Single N-Channel, DPAK, Logic Level.
Automotive Power MOSFET. 25V, 89A, 4.7 mOhm, Single N-Channel, DPAK, Logic Level. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
特性- Low Capacitance
- Low Rds(on)
- Optimized Gate Charge
- Trench Technology
- Pb-Free
- DC-DC Converters
- High/Low Side Switching
| 优势- Minimize Driver Losses
- Minimize Conduction Losses
- Minimize Switching Losses
|
应用 | 终端产品- Desktop PC, Graphic Cards, Game Consoles, and other computing and consumer end products
|
封装
设计和开发工具 (1)
数据表 (1)
应用注释 (1)
封装图纸 (1)
仿真模型 (4)
产品订购型号
| 产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| NVD4856NT4G | Active | AEC Qualified
PPAP Capable
Pb-free
Halide free | DPAK-3 | 369AA | 1 | Tape and Reel | 2500 | $0.3707 |
订购产品技术参数
| Product | Channel Polarity | Configuration | V(BR)DSS Min (V) | VGS Max (V) | VGS(th) Max (V) | ID Max (A) | PD Max (W) | RDS(on) Max @ VGS = 2.5 V (mΩ) | RDS(on) Max @ VGS = 4.5 V (mΩ) | RDS(on) Max @ VGS = 10 V (mΩ) | Qg Typ @ VGS = 4.5 V (nC) | Qg Typ @ VGS = 10 V (nC) | Qgd Typ @ VGS = 4.5 V (nC) | Qrr Typ (nC) | Ciss Typ (pF) | Coss Typ (pF) | Crss Typ (pF) |
|---|
| NVD4856NT4G | N-Channel | Single | 25 | 20 | 2.5 | 89 | 2.14 | | 6.8 | 4.7 | 18 | 38 | 6.6 | 8 | 2241 | 567 | 279 |
