NVMD6N04: Power MOSFET 40V, 4.6A, 34 mOhm, Dual N-Channel, SO-8, Logic Level.
Automotive Power MOSFET. NTMD6N04R2G 40V, 6.0A, Dual N-Channel SOIC-8. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
特性- Designed for use in Low Voltage High Speed switching applications.
- Low RDS(on)
- SOIC-8 Surface Mount Package
| 优势- Fast Switching
- Extends Battery Life
- Saves board space
|
应用- DC-DC Converter
- Computers
- Printers
- Buck-Boost Circuit
|
封装
仿真模型 (4)
封装图纸 (1)
数据表 (1)
产品订购型号
| 产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| NVMD6N04R2G | Active | AEC Qualified
PPAP Capable
Pb-free
Halide free | SOIC-8 | 751-07 | 1 | Tape and Reel | 2500 | $0.3943 |
订购产品技术参数
| Product | Channel Polarity | Configuration | V(BR)DSS Min (V) | VGS Max (V) | VGS(th) Max (V) | ID Max (A) | PD Max (W) | RDS(on) Max @ VGS = 2.5 V (mΩ) | RDS(on) Max @ VGS = 4.5 V (mΩ) | RDS(on) Max @ VGS = 10 V (mΩ) | Qg Typ @ VGS = 4.5 V (nC) | Qg Typ @ VGS = 10 V (nC) | Qgd Typ @ VGS = 4.5 V (nC) | Qrr Typ (nC) | Ciss Typ (pF) | Coss Typ (pF) | Crss Typ (pF) |
|---|
| NVMD6N04R2G | N-Channel | Dual | 40 | 20 | 3 | 5.8 | 2 | | 43 | 34 | | 20 | 5.5 | 20 | 723 | 156 | 53 |
