NVMFD5853N: Power MOSFET 40V, 53A, 10 mOhm, Dual N-Channel, SO8-FL, Logic Level.
Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
特性- Small Footprint (5x6 mm)
- Low RDS(on)
- Low Capacitance
- NVMFD5853NWF Wettable Flanks Product
- AEC-Q101 Qualified and PPAP Capable
- Standard Gate Level (VTH min. = 2 V)
| 优势- Reduced board space, smaller modules
- Minimize Conduction Losses
- Minimize Driver Losses
- Facilitates Automated Optical Inspection
- Suitable for use in automotive applications
- Ensures turn off in noisy environments (motor control)
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应用 | 终端产品- Engine control module
- Body control module
- Chassis control module
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应用注释 (1)
封装图纸 (1)
数据表 (1)
产品订购型号
| 产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| NVMFD5853NT1G | Active | AEC Qualified
PPAP Capable
Pb-free
Halide free | SO-8FL Dual / DFN-8 | 506BT | 1 | Tape and Reel | 1500 | $0.4738 |
| NVMFD5853NWFT1G | Active | AEC Qualified
PPAP Capable
Pb-free
Halide free | SO-8FL Dual / DFN-8 | 506BT | 1 | Tape and Reel | 1500 | $0.4911 |
订购产品技术参数
| Product | Channel Polarity | Configuration | V(BR)DSS Min (V) | VGS Max (V) | VGS(th) Max (V) | ID Max (A) | PD Max (W) | RDS(on) Max @ VGS = 2.5 V (mΩ) | RDS(on) Max @ VGS = 4.5 V (mΩ) | RDS(on) Max @ VGS = 10 V (mΩ) | Qg Typ @ VGS = 4.5 V (nC) | Qg Typ @ VGS = 10 V (nC) | Qgd Typ @ VGS = 4.5 V (nC) | Qrr Typ (nC) | Ciss Typ (pF) | Coss Typ (pF) | Crss Typ (pF) |
|---|
| NVMFD5853NT1G | N-Channel | Dual | 40 | 20 | 4 | 53 | 37 | | | 10 | | 24 | 6.6 | 9 | 1225 | 1250 | 100 |
| NVMFD5853NWFT1G | N-Channel | Dual | 40 | 20 | 4 | 53 | 37 | | | 10 | | 24 | 6.6 | 9 | 1225 | 1250 | 100 |
