FPD750 0.5W Power pHEMT
The FPD750 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT) featuring a 0.25μmx750μm Schottky barrier gate defined by high-resolution stepper-based photolithography. The double recessed gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing have been optimized for reliable high-power applications. The FPD750 also features Si3N4 passivation and is available in the low-cost plastic SOT89 SOT343 and DFN packages.
技术特性 Features
- 27.5dBm Linear Output Power at 12GHz
- 11.5dB Power Gain at 12GHz
- 14.5dB Max Stable Gain at 12GHz
- 38dBm OIP3
- 50% Power-Added Efficiency
应用领域 Applications
- Narrowband and Broadband High-Performance Amplifiers
- SATCOM Uplink Transmitters
- PCS/Cellular Low-Voltage High-Efficiency Output Amplifiers
- Medium-Haul Digital Radio Transmitters
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技术指标
| Frequency Range (Min) (MHz): |
1000 |
| Frequency Range (Max) (MHz): |
20000 |
| Gain (dB): |
11.5 |
| OP1dB (dBm): |
27 |
| OIP3 (dBm): |
38 |
| VSUPPLY (V): |
8 |
| ISUPPLY (mA): |
115 |
| Package: |
Die |
订购信息 Ordering Information
- Full Pack (100) FPD750-000
- Small Quantity (25) FPD750-000SQ
- Sample Quantity (3) FPD750-000S3
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订购信息 Ordering Information
| 订购型号 |
MOQ* |
INC* |
Packaging and Shipping Details |
QTY |
Per 1 EA |
| FPD750-000SQ |
25 EA |
25 EA |
Standard 25 Piece Waffle Pack Shipping From Newton Aycliffe |
1+ |
$17.03 |
| FPD750-000 |
100 EA |
100 EA |
Standard 100 Piece Waffle Pack Shipping From Newton Aycliffe |
100+ |
$11.90 |
| |
|
|
|
750+ |
$8.28 |
