FPD750DFN Low Noise High Linearity Power pHEMT
The FPD750DFN is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25μmx750μm Schottky barrier Gate defined by high-resolution stepper-based photolithography. The recessed and offset gate structure minimizes parasitics to optimize performance with an epitaxial structure designed for improved linearity over a range of bias conditions and input power levels.
技术特性 Features
- 24dBm Output Power (P1dB) at 1.85GHz
- 20dB Small-Signal Gain (SSG) at 1.85GHz
- 0.3dB Noise Figure
- 39dBm Output IP3 at 50% Bias
- 45% Power-Added Efficiency
FPD750DFN 产品实物图
应用领域 Applications
- Drivers or Output Stages in PCS/Cellular Base Station Transmitter Amplifiers
- High Intercept-Point LNAs
- WLL and WLAN Systems, and Other Types of Wireless Infrastructure Systems
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技术指标
| Frequency Range (Min) (MHz): |
700 |
| Frequency Range (Max) (MHz): |
5000 |
| Gain (dB): |
20 |
| NF (dB): |
1.5 |
| OP1dB (dBm): |
24 |
| OIP3 (dBm): |
35 |
| VSUPPLY (V): |
5 |
| ISUPPLY (mA): |
100 |
| Package: |
DFN |
订购信息 Ordering Information
- Packaged pHEMT FPD750DFN
- Packaged pHEMT evaluation board (2.0GHz) EB750DFN-BC
- Reel of 1000 FPD750DFN
- Reel of 100 FPD750DFNSR
- Bag of 25 FPD750DFNSQ
- Bag of 5 FPD750DFNSB
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