SPA1426Z 0.7GHz to 2.2GHz 1W InGaP HBT Amplifier
RFMD’s SPA1426Z is a high linearity single-stage class A Heterojunction Bipolar Transistor (HBT) power amplifier. The SPA1426Z is made with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. It is well suited for use as a driver stage in macro/micro-cell infrastructure equipment, or as the final output stage in pico-cell infrastructure equipment. It features an input power detector, on/off power control, ESD protection, excellent overall robustness and a hand reworkable and thermally enhanced SOF-26 package.
技术特性 Features
- P1dB = 29.5dBm at 2140MHz
- ACP = -65dBc with 17dBm Channel Power at 2140MHz
- Low Thermal Resistance Package
- Power Up/Down Control <1μs
- Robust Class 1C ESD
应用领域 Applications
- Macro/Micro-Cell Driver Stage
- Pico-Cell Output Stage
- GSM, CDMA, TDSCDMA,WCDMA, IS-95
- Single and Multi-Carrier Applications
SPA1426Z 产品实物图
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技术指标
Frequency Range (Min) (MHz): |
700 |
Frequency Range (Max) (MHz): |
2200 |
Gain (dB): |
14 |
NF (dB): |
5.3 |
OP1dB (dBm): |
28.5 |
OIP3 (dBm): |
47 |
VSUPPLY (V): |
5 |
ISUPPLY (mA): |
318 |
Package: |
SOF-26 |
订购信息 Ordering Information
- SPA1426Z 7” Reel with 1000 pieces
- SPA1426ZSQ Sample Bag with 25 pieces
- SPA1426ZSR 7” Reel with 100 pieces
- SPA1426ZPCK1 850MHz to 910MHz PCBA with 5 piece Sample Bag
- SPA1426ZPCK2 1930MHz to 1960MHz PCBA with 5 piece Sample Bag
- SPA1426ZPCK3 2110MHz to 2170MHz PCBA with 5 piece Sample Bag
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