SN74ABT827 具有三态输出的 10 位缓冲器/驱动器
SN74ABT827 描述
These 10-bit buffers or bus drivers provide a high-performance bus interface for wide data paths or buses carrying parity.
The 3-state control gate is a 2-input AND gate with active-low inputs so that if either output-enable (OE1\ or OE2\) input is high, all ten outputs are in the high-impedance state. The 'ABT827 provide true data at the outputs.
When VCC is between 0 and 2.1 V, the device is in the high-impedance state during power up or power down. However, to ensure the high-impedance state above 2.1 V, OE\ should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.
The SN54ABT827 is characterized for operation over the full military temperature range of -55°C to 125°C
| SN54ABT827 | SN74ABT827 | |
| Voltage Nodes(V) | 5 | 5 |
| Vcc range(V) | 4.5 to 5.5 | 4.5 to 5.5 |
| Logic | True | True |
| Input Level | TTL | TTL |
| Output Level | TTL | TTL |
| Output Drive(mA) | -32/64 | |
| No. of Outputs | 10 | 10 |
| tpd max(ns) | 4.8 | |
| Static Current | 15.12 | |
| Rating | Military | Catalog |
| Technology Family | ABT | ABT |
SN74ABT827 特性
- State-of-the-Art EPIC-IIB™ BiCMOS Design Significantly Reduces Power Dissipation
- Flow-Through Architecture Optimizes PCB Layout
- Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17
- Typical VOLP (Output Ground Bounce) < 1 V at VCC = 5 V, TA = 25°C
- High-Impedance State During Power Up and Power Down
- High-Drive Outputs (-32-mA IOH, 64-mA IOL)
- Package Options Include Plastic Small-Outline (DW), Shrink Small-Outline (DB), and Thin Shrink Small-Outline (PW) Packages, Ceramic Chip Carriers (FK), and Plastic (NT) and Ceramic (JT) DIPs
SN74ABT827 芯片订购指南
| 器件 | 状态 | 温度 | 价格（美元） | 封装 | 引脚 | 封装数量 | 封装载体 | 丝印标记 |
| SN74ABT827DW | ACTIVE | -40 to 85 | 0.48 | 1ku | SOIC(DW) | 24 | 25 | TUBE | ABT827 |
| SN74ABT827DWE4 | ACTIVE | -40 to 85 | 0.48 | 1ku | SOIC(DW) | 24 | 25 | TUBE | ABT827 |
| SN74ABT827DWG4 | ACTIVE | -40 to 85 | 0.48 | 1ku | SOIC(DW) | 24 | 25 | TUBE | ABT827 |
SN74ABT827 质量与无铅数据
| 器件 | 环保计划* | 铅/焊球涂层 | MSL 等级/回流焊峰 | 环保信息与无铅 (Pb-free) | DPPM / MTBF / FIT 率 |
| SN74ABT827DW | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | SN74ABT827DW | SN74ABT827DW |
| SN74ABT827DWE4 | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | SN74ABT827DWE4 | SN74ABT827DWE4 |
| SN74ABT827DWG4 | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | SN74ABT827DWG4 | SN74ABT827DWG4 |
SN74ABT827 应用技术支持与电子电路设计开发资源下载
- SN74ABT827 数据资料 dataSheet 下载.PDF
- TI 德州仪器缓冲器、驱动器/收发器产品选型与价格 . xls
- CMOS 非缓冲反向器在振荡器电路中的使用 (PDF 951 KB)
- Semiconductor Packing Methodology (PDF 3005 KB)
- 逻辑产品选择指南 2006/2007 （修订版 Z）(4462KB)
- 标准线性和逻辑产品 5 分钟指南 (786KB)
- 了解和解释标准逻辑数据表
- LOGIC Pocket Data Book (PDF 6001 KB)
- HiRel Unitrode Power Management Brochure (PDF 206 KB)
- Logic Cross-Reference (PDF 2938 KB)
