AM26LV32E 具有 +/-15kV IEC ESD 的低电压高速四路差动线路接收器

The AM26LV32E consists of quadruple differential line receivers with 3-state outputs. These differential receivers have ±15-kV ESD (HBM and IEC61000-4-2, Air-Gap Discharge) and ±8-kV ESD (IEC61000-4-2, Contact Discharge) protection for RS422 bus pins.

This device is designed to meet TIA/EIA-422-B and ITU recommendation V.11 drivers with reduced supply voltage. The device is optimized for balanced bus transmission at switching rates up to 32 MHz. The 3-state outputs permit connection directly to a bus-organized system.

The AM26LV32E has an internal fail-safe circuitry that prevents the device from putting an unknown voltage signal at the receiver outputs. In the open fail-safe, shorted fail-safe, and terminated fail-safe, a high state is produced at the respective output.

This device is supported for partial-power-down applications using Ioff. Ioff circuitry disables the outputs, preventing damaging current backflow through the device when it is powered down.

The AM26LV32EI is characterized for operation from –40°C to 85°C

AM26LV32E
Receivers Per Package 4  
Supply Voltage(s)(V) 3.3  
Supply Voltage(s)(Min)(V) 3  
Supply Voltage(s)(Max)(V) 3.6  
ESD(kV) 15  
Signaling Rate(Mbps) 32  
Temp Range(C) -40 to 85  
Rating Catalog  
Operating Temperature Range(�C) -40 to 85  
# of TX/RX 0 TX / 4 RX  
Pin/Package 16SO, 16SOIC, 16TSSOP, 16VQFN
AM26LV32E 特性
AM26LV32E 芯片订购指南
器件 状态 温度 价格 封装 | 引脚 封装数量 | 封装载体 丝印标记
AM26LV32EIDR ACTIVE -40 to 85 0.90 | 1ku SOIC (D) | 16 2500 | LARGE T&R  
AM26LV32EIDRG4 ACTIVE -40 to 85 0.90 | 1ku SOIC (D) | 16 2500 | LARGE T&R  
AM26LV32EINSR ACTIVE -40 to 85 0.90 | 1ku SO (NS) | 16 2000 | LARGE T&R  
AM26LV32EINSRG4 ACTIVE -40 to 85 0.90 | 1ku SO (NS) | 16 2000 | LARGE T&R  
AM26LV32EIPWR ACTIVE -40 to 85 0.90 | 1ku TSSOP (PW) | 16 2000 | LARGE T&R  
AM26LV32EIPWRG4 ACTIVE -40 to 85 0.90 | 1ku TSSOP (PW) | 16 2000 | LARGE T&R  
AM26LV32EIRGYR ACTIVE -40 to 85 0.90 | 1ku VQFN (RGY) | 16 3000 | LARGE T&R  
AM26LV32EIRGYRG4 ACTIVE -40 to 85 0.90 | 1ku VQFN (RGY) | 16 3000 | LARGE T&R  
AM26LV32E 质量与无铅数据
器件 环保计划* 铅/焊球涂层 MSL 等级/回流焊峰 环保信息与无铅 (Pb-free) DPPM / MTBF / FIT 率
AM26LV32EIDR Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM AM26LV32EIDR AM26LV32EIDR
AM26LV32EIDRG4 Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM AM26LV32EIDRG4 AM26LV32EIDRG4
AM26LV32EINSR Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM AM26LV32EINSR AM26LV32EINSR
AM26LV32EINSRG4 Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM AM26LV32EINSRG4 AM26LV32EINSRG4
AM26LV32EIPWR Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM AM26LV32EIPWR AM26LV32EIPWR
AM26LV32EIPWRG4 Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM AM26LV32EIPWRG4 AM26LV32EIPWRG4
AM26LV32EIRGYR Green (RoHS & no Sb/Br)  CU NIPDAU  Level-2-260C-1 YEAR AM26LV32EIRGYR AM26LV32EIRGYR
AM26LV32EIRGYRG4 Green (RoHS & no Sb/Br)  CU NIPDAU  Level-2-260C-1 YEAR AM26LV32EIRGYRG4 AM26LV32EIRGYRG4
AM26LV32E 应用技术支持与电子电路设计开发资源下载
  1. AM26LV32E 数据资料 dataSheet 下载.PDF
  2. TI 德州仪器RS-422选型与价格 . xls
  3. 所选封装材料的热学和电学性质 (PDF 645 KB)
  4. 使用数字隔离器设计隔离式 I2C 总线接口 (zhct119.PDF, 339 KB)
  5. 1Q 2011 Issue Analog Applications Journal (slyt399.PDF, 964 KB)
  6. 接口选择指南 (Rev. D) (PDF 2994 KB)
  7. Signaling Rate vs. Distance for Differential Buffers (PDF 420 KB)
  8. Q1 2009 Issue Analog Applications Journal (slyt319.PDF, 1.39 MB)
  9. Isolated RS-485 Reference Design (PDF 80 KB)
  10. 无铅组件涂层的保存期评估 (PDF 1305 KB)
  11. Analog Signal Chain Guide (8.62 MB)
  12. Industrial Interface IC Solutions (101 KB)