INA217 用于替换 SSM2017 的低噪声低失真仪表放大器
The INA217 is a low-noise, low-distortion, monolithic instrumentation amplifier. Current-feedback circuitry allows the INA217 to achieve wide bandwidth and excellent dynamic response over a wide range of gain. The INA217 is ideal for low-level audio signals such as balanced low-impedance microphones. Many industrial, instrumentation, and medical applications also benefit from its low noise and wide bandwidth.
Unique distortion cancellation circuitry reduces distortion to extremely low levels, even in high gain. The INA217 provides near-theoretical noise performance for 200 source impedance. The INA217 features differential input, low noise, and low distortion that provides superior performance in professional microphone amplifier applications
|
INA217 |
| CMRR (Min) (dB) |
100 |
| Number of Channels |
1 |
| Pin/Package |
16SOIC, 8PDIP |
| Input Offset (+/-) (Max) (uV) |
250 |
| Input Offset Drift (+/-) (Max) (uV/Degrees Celsius) |
1 |
| Input Bias Current (+/-) (Max) (nA) |
12000 |
| Noise at 1kHz (Typ) (nV/rt(Hz)) |
1.3 |
| Quiescent Current (+/-) (Typ) (mA) |
10 |
| Settling Time to 0.01% (Typ) (us) |
3.5 |
| Gain (V/V) |
1 to 10000 |
| Input Type |
Bipolar |
| Non-Linearity (+/-) (Max) (%) |
0.0006 |
| Output Offset (+/-) (Max) (uV) |
5000/G |
| Output Offset Drift (+/-) (Max) (uV/Degrees Celsius) |
20/G |
| Bandwidth at G=100 (Min) (kHz) |
800 |
| Operating Temperature Range (C) |
-40 to 85,-40 to 125 |
INA217 特性
- LOW NOISE: 1.3nV/Hz at 1kHz
- LOW THD+N: 0.004% at 1kHz, G = 100
- WIDE BANDWIDTH: 800kHz at G = 100
- WIDE SUPPLY RANGE: ±4.5V to ±18V
- HIGH CMR: > 100dB
- GAIN SET WITH EXTERNAL RESISTOR
- DIP-8 AND SOL-16 WIDEBODY PACKAGES
- APPLICATIONS
- PROFESSIONAL MICROPHONE PREAMPS
- MOVING-COIL TRANSDUCER AMPLIFIERS
- DIFFERENTIAL RECEIVERS
- BRIDGE TRANSDUCER AMPLIFIERS
INA217 芯片订购指南
| 器件 |
状态 |
温度 |
价格 |
封装 | 引脚 |
封装数量 | 封装载体 |
丝印标记 |
| INA217AIDWR |
ACTIVE |
-40 to 125 |
2.50 | 1ku |
SOIC (DW) | 16 |
1000 | LARGE T&R |
|
| INA217AIDWRE4 |
ACTIVE |
-40 to 125 |
2.50 | 1ku |
SOIC (DW) | 16 |
1000 | LARGE T&R |
|
| INA217AIDWT |
ACTIVE |
-40 to 125 |
2.85 | 1ku |
SOIC (DW) | 16 |
250 | SMALL T&R |
|
| INA217AIDWTE4 |
ACTIVE |
-40 to 125 |
2.85 | 1ku |
SOIC (DW) | 16 |
250 | SMALL T&R |
|
| INA217AIP |
ACTIVE |
-40 to 85 |
2.50 | 1ku |
PDIP (P) | 8 |
50 | TUBE |
|
| INA217AIPG4 |
ACTIVE |
-40 to 85 |
2.50 | 1ku |
PDIP (P) | 8 |
50 | TUBE |
|
INA217 质量与无铅数据
| 器件 |
环保计划* |
铅/焊球涂层 |
MSL 等级/回流焊峰 |
环保信息与无铅 (Pb-free) |
DPPM / MTBF / FIT 率 |
| INA217AIDWR |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-3-260C-168 HR |
INA217AIDWR |
INA217AIDWR |
| INA217AIDWRE4 |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-3-260C-168 HR |
INA217AIDWRE4 |
INA217AIDWRE4 |
| INA217AIDWT |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-3-260C-168 HR |
INA217AIDWT |
INA217AIDWT |
| INA217AIDWTE4 |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-3-260C-168 HR |
INA217AIDWTE4 |
INA217AIDWTE4 |
| INA217AIP |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
N/A for Pkg Type |
INA217AIP |
INA217AIP |
| INA217AIPG4 |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
N/A for Pkg Type |
INA217AIPG4 |
INA217AIPG4 |
INA217 应用技术支持与电子电路设计开发资源下载
- INA217 数据资料 dataSheet 下载.PDF
- TI 德州仪器仪单电源产品选型与价格 . xls
- 所选封装材料的热学和电学性质 (PDF 645 KB)
- 高速数据转换 (PDF 1967 KB)
- 使您的仪器放大器设计达到最佳效果 (zhct011.PDF, 897 KB)
- A Numerical Protection Relay Solution (slaa466.HTM, 8 KB)
- 在 PSPICE 中使用德州仪器 (TI) SPICE 模型 (zhca088.HTM, 8 KB)
- PowerPAD™ Thermally Enhanced Package (slma002g.HTM, 8 KB)
- 运算放大器的单电源操作 (PDF 2174 KB)
- Tuning in Amplifiers (PDF 44 KB)
- Op Amp Performance Analysis (PDF 76 KB)
- An Error Analysis of the ISO102 in a Small Signal Measuring Application (PDF 29 KB)
- Level Shifting Signals with Differential Amplifiers (PDF 23 KB)
- Operational Amplifier Macromodels: A Comparison (PDF 59 KB)
