MAGX-002731-180L00 GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 180W Peak, 300us Pulse, 10% Duty

The MAGX-002731-180L00 is a gold metalized matched Gallium Nitride (GaN) on Silicon Carbide RF power transistor optimized for civilian and military radar pulsed applications between 2700 - 3100 MHz. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, ruggedness over a wide bandwidth for today’s demanding application needs. The MAGX-002731-180L00 is constructed using a thermally enhanced Cu/Mo/Cu flanged ceramic package which provides excellent thermal performance. High breakdown voltages allow for reliable and stable operation in extreme mismatched load conditions unparalleled with older semiconductor technologies.

技术特性 Features
  • GaN depletion mode HEMT microwave transistor
  • Common source configuration
  • Broadband Class AB operation
  • Thermally enhanced Cu/Mo/Cu package
  • RoHS Compliant
  • +50V Typical Operation
  • MTTF of 114 years (Channel Temperature < 200°C)
  • EAR99 Export Classification
订购信息 Ordering Information
  • MAGX-002731-180L00 180W GaN Power Transistor
  • MAGX-002731-SB3PPR Evaluation Fixture
应用领域Applications
  • Civilian and Military Pulsed Radar
MAGX-002731-180L00 产品实物图

MAGX-002731-180L00 产品实物图


应用技术支持与电子电路设计开发资源下载 版本信息 大小
MAGX-002731-180L00数据资料DataSheet下载:PDF Rev.V2 3页