M/A-COM Technology Solutions offers a new family of Gallium Nitride (GaN) RF power transistors and pallets. This product family targets L- and S-Band pulsed radar applications and leverages M/A-COM Tech's rich heritage of providing both standard and custom solutions to meet the most demanding customer needs. Benefits of M/A-COM Tech’s GaN products include high breakdown voltage, superior power density, and higher and broader frequency operation than Silicon.
Key features of our GaN on Silicon Carbide (SiC) products include:
| Frequency (MHz) | ||||||
|---|---|---|---|---|---|---|
| Part Number | Min | Max | Pout (W) | Pulse (µs) | Duty (%) | Gain (dB) |
| MAGX-000035-030000 GaN on SiC HEMT Power Transistor |
1.00 | 3500.00 | 30.0 | 100 | 25.0 | |
| MAGX-000912-125L00 GaN on SiC HEMT Power Transistor |
960.00 | 1215.00 | 125.0 | 2000 | 10 | 20.0 |
| MAGX-000912-250L00 GaN on SiC HEMT Power Transistor |
960.00 | 1215.00 | 250.0 | 128 | 10 | 19.0 |
| MAGX-001214-125L00 GaN on SiC HEMT Power Transistor |
1200.00 | 1400.00 | 125.0 | 300 | 10 | 19.0 |
| MAGX-001214-250L00 GaN on SiC HEMT Power Transistor |
1200.00 | 1400.00 | 250.0 | 2000 | 10 | 19.0 |
| MAGX-001220-100L00 GaN on SiC HEMT Power Transistor |
1200.00 | 2000.00 | 100.0 | 500 | 10 | 14.0 |
| MAGX-002731-030L00 GaN on SiC HEMT Power Transistor |
2700.00 | 3100.00 | 30.0 | 500 | 10 | 11.0 |
| MAGX-002731-100L00 GaN on SiC HEMT Power Transistor |
2700.00 | 3100.00 | 100.0 | 500 | 10 | 12.0 |
| MAGX-002731-180L00 GaN on SiC HEMT Power Transistor |
2700.00 | 3100.00 | 180.0 | 300 | 10 | 11.0 |
| MAGX-002735-040L00 GaN on SiC HEMT Pulsed Power Transistor |
2700.00 | 3500.00 | 40.0 | 300 | 10 | 10.5 |
| MAGX-003135-030L00 GaN on SiC HEMT Power Transistor |
3100.00 | 3500.00 | 30.0 | 500 | 10 | 11.0 |
| MAGX-003135-120L00 GaN HEMT Pulsed Power Transsitor |
3100.00 | 3500.00 | 120.0 | 300 | 10 | 11.8 |
| MAGX-003135-180L00 GaN on SiC HEMT Power Transistor |
3100.00 | 3500.00 | 180.0 | 300 | 10 | 11.0 |
