MAGX-001220-100L00 GaN HEMT Power Transistor 100W Peak, 1.2 - 2.0 GHz
The MAGX-001220-100L00 is a gold metalized Gallium Nitride (GaN) on Silicon Carbide RF power transistor suitable for a variety of RF power amplifier applications. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, ruggedness over multiple octave bandwidths for today’s demanding application needs. The MAGX-001220-100L00 is constructed using a thermally enhanced Cu/Mo/Cu flanged ceramic package which provides excellent thermal performance. High breakdown voltages allow for reliable and stable operation in extreme mismatched load conditions unparalleled with older semiconductor technologies.
| 应用技术支持与电子电路设计开发资源下载 | 版本信息 | 大小 |
| MAGX-001220-100L00数据资料DataSheet下载：PDF | Rev.V2 | 3页 |
