RLDRAM 2
订购型号 |
TECHNOLOGY |
DENSITY |
PART STATUS |
ROHS |
DEPTH |
WIDTH |
I/O |
VOLTAGE |
PACKAGE |
PIN COUNT |
CLOCK RATE |
CYCLE TIME |
OP TEMP |
MT49H16M18BM-25 |
RLDRAM 2 |
288Mb |
Sampling |
Yes |
16Mb |
x18 |
Common |
1.8V |
uBGA |
144-ball |
400 MHz |
2.5ns |
0C to +95C |
MT49H16M18BM-33 |
RLDRAM 2 |
288Mb |
Sampling |
Yes |
16Mb |
x18 |
Common |
1.8V |
uBGA |
144-ball |
300 MHz |
3.3ns |
0C to +95C |
MT49H16M18BM-33 IT |
RLDRAM 2 |
288Mb |
EOL Pending |
Yes |
16Mb |
x18 |
Common |
1.8V |
uBGA |
144-ball |
300 MHz |
3.3ns |
-40C to +95C |
MT49H16M18CBM-25 |
RLDRAM 2 |
288Mb |
Sampling |
Yes |
16Mb |
x18 |
Separate |
1.8V |
uBGA |
144-ball |
400 MHz |
2.5ns |
0C to +95C |
MT49H16M18CBM-33 |
RLDRAM 2 |
288Mb |
EOL Pending |
Yes |
16Mb |
x18 |
Separate |
1.8V |
uBGA |
144-ball |
300 MHz |
3.3ns |
0C to +95C |
MT49H16M18CBM-33 IT |
RLDRAM 2 |
288Mb |
EOL Pending |
Yes |
16Mb |
x18 |
Separate |
1.8V |
uBGA |
144-ball |
300 MHz |
3.3ns |
-40C to +95C |
MT49H16M18CFM-25 |
RLDRAM 2 |
288Mb |
EOL Pending |
5月6日 |
16Mb |
x18 |
Separate |
1.8V |
uBGA |
144-ball |
400 MHz |
2.5ns |
0C to +95C |
MT49H16M18CFM-33 |
RLDRAM 2 |
288Mb |
EOL Pending |
5月6日 |
16Mb |
x18 |
Separate |
1.8V |
uBGA |
144-ball |
300 MHz |
3.3ns |
0C to +95C |
MT49H16M18CFM-33 IT |
RLDRAM 2 |
288Mb |
Production |
5月6日 |
16Mb |
x18 |
Separate |
1.8V |
uBGA |
144-ball |
300 MHz |
3.3ns |
-40C to +95C |
MT49H16M18CFM-5 IT |
RLDRAM 2 |
288Mb |
Production |
5月6日 |
16Mb |
x18 |
Separate |
1.8V |
uBGA |
144-ball |
200 MHz |
5ns |
-40C to +95C |
MT49H16M18FM-25 |
RLDRAM 2 |
288Mb |
Sampling |
5月6日 |
16Mb |
x18 |
Common |
1.8V |
uBGA |
144-ball |
400 MHz |
2.5ns |
0C to +95C |
MT49H16M18FM-33 |
RLDRAM 2 |
288Mb |
Sampling |
5月6日 |
16Mb |
x18 |
Common |
1.8V |
uBGA |
144-ball |
300 MHz |
3.3ns |
0C to +95C |
MT49H16M18FM-33 IT |
RLDRAM 2 |
288Mb |
EOL Pending |
5月6日 |
16Mb |
x18 |
Common |
1.8V |
uBGA |
144-ball |
300 MHz |
3.3ns |
-40C to +95C |
MT49H16M36BM-18 |
RLDRAM 2 |
576Mb |
Sampling |
Yes |
16Mb |
x36 |
Common |
1.8V |
uBGA |
144-ball |
533 MHz |
1.875ns |
0C to +95C |
MT49H16M36BM-25 |
RLDRAM 2 |
576Mb |
Sampling |
Yes |
16Mb |
x36 |
Common |
1.8V |
uBGA |
144-ball |
400 MHz |
2.5ns |
0C to +95C |
MT49H16M36BM-25E |
RLDRAM 2 |
576Mb |
Sampling |
Yes |
16Mb |
x36 |
Common |
1.8V |
uBGA |
144-ball |
400 MHz |
2.5ns |
0C to +95C |
MT49H16M36BM-33 |
RLDRAM 2 |
576Mb |
Sampling |
Yes |
16Mb |
x36 |
Common |
1.8V |
uBGA |
144-ball |
300 MHz |
3.3ns |
0C to +95C |
MT49H16M36FM-18 |
RLDRAM 2 |
576Mb |
Sampling |
5月6日 |
16Mb |
x36 |
Common |
1.8V |
uBGA |
144-ball |
533 MHz |
1.875ns |
0C to +95C |
MT49H16M36FM-18 IT |
RLDRAM 2 |
576Mb |
Contact Factory |
5月6日 |
16Mb |
x36 |
Common |
1.8V |
uBGA |
144-ball |
533 MHz |
1.875ns |
-40C to +95C |
MT49H16M36FM-25 |
RLDRAM 2 |
576Mb |
Sampling |
5月6日 |
16Mb |
x36 |
Common |
1.8V |
uBGA |
144-ball |
400 MHz |
2.5ns |
0C to +95C |
MT49H16M36FM-25 IT |
RLDRAM 2 |
576Mb |
Sampling |
5月6日 |
16Mb |
x36 |
Common |
1.8V |
uBGA |
144-ball |
400 MHz |
2.5ns |
-40C to +95C |
MT49H16M36FM-25E |
RLDRAM 2 |
576Mb |
Sampling |
5月6日 |
16Mb |
x36 |
Common |
1.8V |
uBGA |
144-ball |
400 MHz |
2.5ns |
0C to +95C |
MT49H16M36FM-33 |
RLDRAM 2 |
576Mb |
EOL Pending |
5月6日 |
16Mb |
x36 |
Common |
1.8V |
uBGA |
144-ball |
300 MHz |
3.3ns |
0C to +95C |
MT49H32M18BM-18 |
RLDRAM 2 |
576Mb |
Sampling |
Yes |
32Mb |
x18 |
Common |
1.8V |
uBGA |
144-ball |
533 MHz |
1.875ns |
0C to +95C |
MT49H32M18BM-25 |
RLDRAM 2 |
576Mb |
Sampling |
Yes |
32Mb |
x18 |
Common |
1.8V |
uBGA |
144-ball |
400 MHz |
2.5ns |
0C to +95C |
MT49H32M18BM-25E |
RLDRAM 2 |
576Mb |
Sampling |
Yes |
32Mb |
x18 |
Common |
1.8V |
uBGA |
144-ball |
400 MHz |
2.5ns |
0C to +95C |
MT49H32M18BM-33 |
RLDRAM 2 |
576Mb |
Sampling |
Yes |
32Mb |
x18 |
Common |
1.8V |
uBGA |
144-ball |
300 MHz |
3.3ns |
0C to +95C |
MT49H32M18CBM-18 |
RLDRAM 2 |
576Mb |
Sampling |
Yes |
32Mb |
x18 |
Separate |
1.8V |
uBGA |
144-ball |
533 MHz |
1.875ns |
0C to +95C |
MT49H32M18CBM-25 |
RLDRAM 2 |
576Mb |
Sampling |
Yes |
32Mb |
x18 |
Separate |
1.8V |
uBGA |
144-ball |
400 MHz |
2.5ns |
0C to +95C |
MT49H32M18CBM-33 |
RLDRAM 2 |
576Mb |
EOL Pending |
Yes |
32Mb |
x18 |
Separate |
1.8V |
uBGA |
144-ball |
300 MHz |
3.3ns |
0C to +95C |
MT49H32M18CFM-18 |
RLDRAM 2 |
576Mb |
Sampling |
5月6日 |
32Mb |
x18 |
Separate |
1.8V |
uBGA |
144-ball |
533 MHz |
1.875ns |
0C to +95C |
MT49H32M18CFM-25 |
RLDRAM 2 |
576Mb |
Sampling |
5月6日 |
32Mb |
x18 |
Separate |
1.8V |
uBGA |
144-ball |
400 MHz |
2.5ns |
0C to +95C |
MT49H32M18CFM-25E |
RLDRAM 2 |
576Mb |
Sampling |
5月6日 |
32Mb |
x18 |
Separate |
1.8V |
uBGA |
144-ball |
400 MHz |
2.5ns |
0C to +95C |
MT49H32M18CFM-33 |
RLDRAM 2 |
576Mb |
EOL Pending |
5月6日 |
32Mb |
x18 |
Separate |
1.8V |
uBGA |
144-ball |
300 MHz |
3.3ns |
0C to +95C |
MT49H32M18FM-18 |
RLDRAM 2 |
576Mb |
EOL Pending |
5月6日 |
32Mb |
x18 |
Common |
1.8V |
uBGA |
144-ball |
533 MHz |
1.875ns |
0C to +95C |
MT49H32M18FM-25 |
RLDRAM 2 |
576Mb |
Sampling |
5月6日 |
32Mb |
x18 |
Common |
1.8V |
uBGA |
144-ball |
400 MHz |
2.5ns |
0C to +95C |
MT49H32M18FM-33 |
RLDRAM 2 |
576Mb |
Sampling |
5月6日 |
32Mb |
x18 |
Common |
1.8V |
uBGA |
144-ball |
300 MHz |
3.3ns |
0C to +95C |
MT49H32M9BM-25 |
RLDRAM 2 |
288Mb |
Sampling |
Yes |
32Mb |
x9 |
Common |
1.8V |
uBGA |
144-ball |
400 MHz |
2.5ns |
0C to +95C |
MT49H32M9BM-33 |
RLDRAM 2 |
288Mb |
Sampling |
Yes |
32Mb |
x9 |
Common |
1.8V |
uBGA |
144-ball |
300 MHz |
3.3ns |
0C to +95C |
MT49H32M9FM-25 |
RLDRAM 2 |
288Mb |
Sampling |
5月6日 |
32Mb |
x9 |
Common |
1.8V |
uBGA |
144-ball |
400 MHz |
2.5ns |
0C to +95C |
MT49H32M9FM-33 |
RLDRAM 2 |
288Mb |
Sampling |
5月6日 |
32Mb |
x9 |
Common |
1.8V |
uBGA |
144-ball |
300 MHz |
3.3ns |
0C to +95C |
MT49H64M9BM-18 |
RLDRAM 2 |
576Mb |
EOL Pending |
Yes |
64Mb |
x9 |
Common |
1.8V |
uBGA |
144-ball |
533 MHz |
1.875ns |
0C to +95C |
MT49H64M9BM-25 |
RLDRAM 2 |
576Mb |
Sampling |
Yes |
64Mb |
x9 |
Common |
1.8V |
uBGA |
144-ball |
400 MHz |
2.5ns |
0C to +95C |
MT49H64M9BM-25E IT |
RLDRAM 2 |
576Mb |
Sampling |
Yes |
64Mb |
x9 |
Common |
1.8V |
uBGA |
144-ball |
400 MHz |
2.5ns |
0C to +95C |
MT49H64M9BM-33 |
RLDRAM 2 |
576Mb |
EOL Pending |
Yes |
64Mb |
x9 |
Common |
1.8V |
uBGA |
144-ball |
300 MHz |
3.3ns |
0C to +95C |
MT49H64M9CBM-33 |
RLDRAM 2 |
576Mb |
EOL Pending |
Yes |
64Mb |
x9 |
Separate |
1.8V |
uBGA |
144-ball |
300 MHz |
3.3ns |
0C to +95C |
MT49H64M9CFM-33 |
RLDRAM 2 |
576Mb |
EOL Pending |
5月6日 |
64Mb |
x9 |
Separate |
1.8V |
uBGA |
144-ball |
300 MHz |
3.3ns |
0C to +95C |
MT49H64M9FM-25 |
RLDRAM 2 |
576Mb |
Sampling |
5月6日 |
64Mb |
x9 |
Common |
1.8V |
uBGA |
144-ball |
400 MHz |
2.5ns |
0C to +95C |
MT49H64M9FM-25E |
RLDRAM 2 |
576Mb |
Sampling |
5月6日 |
64Mb |
x9 |
Common |
1.8V |
uBGA |
144-ball |
400 MHz |
2.5ns |
0C to +95C |
MT49H64M9FM-33 |
RLDRAM 2 |
576Mb |
EOL Pending |
5月6日 |
64Mb |
x9 |
Common |
1.8V |
uBGA |
144-ball |
300 MHz |
3.3ns |
0C to +95C |
MT49H8M36BM-25 |
RLDRAM 2 |
288Mb |
Sampling |
Yes |
8Mb |
x36 |
Common |
1.8V |
uBGA |
144-ball |
400 MHz |
2.5ns |
0C to +95C |
MT49H8M36BM-33 |
RLDRAM 2 |
288Mb |
Sampling |
Yes |
8Mb |
x36 |
Common |
1.8V |
uBGA |
144-ball |
300 MHz |
3.3ns |
0C to +95C |
MT49H8M36BM-33 IT |
RLDRAM 2 |
288Mb |
EOL Pending |
Yes |
8Mb |
x36 |
Common |
1.8V |
uBGA |
144-ball |
300 MHz |
3.3ns |
-40C to +95C |
MT49H8M36FM-25 |
RLDRAM 2 |
288Mb |
Sampling |
5月6日 |
8Mb |
x36 |
Common |
1.8V |
uBGA |
144-ball |
400 MHz |
2.5ns |
0C to +95C |
MT49H8M36FM-33 |
RLDRAM 2 |
288Mb |
Sampling |
5月6日 |
8Mb |
x36 |
Common |
1.8V |
uBGA |
144-ball |
300 MHz |
3.3ns |
0C to +95C |
MT49H8M36FM-33 IT |
RLDRAM 2 |
288Mb |
EOL Pending |
5月6日 |
8Mb |
x36 |
Common |
1.8V |
uBGA |
144-ball |
300 MHz |
3.3ns |
-40C to +95C |
RLDRAM 2 延时减小动态随机访问存储器