DTM3A25P20NFDB：MOSFET 带 BJT
| Part Number | Data Sheet | SPICE Model | Qualified to AECQ10x | PPAP Capable | Config/ Polarity | ESD Diodes (Y/N) | VDS (V) | VGS (±V) | IDSA +25ºC (A) | PDW +25ºC (W) | RDS(ON) Max (10V) (mΩ) | RDS(ON) Max (4.5V) (mΩ) | RDS(ON) Max (2.5V) (mΩ) | VGS (th) (V) | QG Typ@ VGS = 10V(nC) |
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| DTM3A25P20NFDB | DTM3A25P20NFDB.pdf | - | No | No | N + PNP | No | 20 | 0.5 | 1 | 2.47 | - | 400 | 500 | 1 | - |
Features
- Combination of PNP low VCE(sat) Transistor and N-Channel MOSFET
- Very low collector-emitter saturation voltage VCE(sat)
- High Collector Current Capability IC and ICM
- High Collector Current Gain (hFE) at high IC
- PD up to 2.47W for power demanding applications
订购型号
U-DFN2020-6
