DTM3A25P20NFDB:MOSFET plus BJT

Part NumberData SheetSPICE ModelQualified to AECQ10xPPAP CapableConfig/ PolarityESD Diodes (Y/N)VDS (V)VGS (±V)IDSA +25ºC (A)PDW +25ºC (W)RDS(ON) Max (10V) (mΩ)RDS(ON) Max (4.5V) (mΩ)RDS(ON) Max (2.5V) (mΩ)VGS (th) (V)QG Typ@ VGS = 10V(nC)
DTM3A25P20NFDBDTM3A25P20NFDB.pdf-NoNoN + PNPNo200.512.47-4005001-
Features
  • Combination of PNP low VCE(sat) Transistor and N-Channel MOSFET
  • Very low collector-emitter saturation voltage VCE(sat)
  • High Collector Current Capability IC and ICM
  • High Collector Current Gain (hFE) at high IC
  • PD up to 2.47W for power demanding applications
Ordering Information
  • DTM3A25P20NFDB-7
U-DFN2020-6
DTM3A25P20NFDB.pdf DTM3A25P20NFDB