LET9070FB:70W 28V HF to 2GHz LDMOS TRANSISTOR

The LET9070FB is a common source N-channel enhancement mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET9070FB is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for base station applications requiring high linearity.

Key Features

  • Excellent thermal stability
  • Common source configuration
  • POUT (@ 28 V)= 70 W with 16 dB gain @ 945 MHz
  • BeO free package
  • In compliance with the 2002/95/EC European directive
  • Bidirectional ESD
产品规格
DescriptionVersionSize
DS9431: RF power transistor from the LdmoST family of N-channel enhancement-mode lateral MOSFETs1.092 KB
应用手册
DescriptionVersionSize
AN1294: PowerSO-10RF: the first true RF power SMD package3.21 MB
Software Development Tools
型号制造商Description
STSW-RFMOS001STMismatch analysis for RF transistor circuits based on Agilent ADS
STSW-RFMOS002STLarge signal load stability for RF transistors based on Agilnet ADS
样片和购买
型号QuantityUnit Price (US$) *PackagePacking TypeECCN (EU)ECCN (US)Country of Origin
LET9070FB--M250Loose PieceNECEAR99MOROCCO
质量和可靠性
型号PackageGradeRoHS Compliance GradeMaterial Declaration**
LET9070FBM250IndustrialEcopack1
RF power transistor from the LdmoST family of N-channel enhancement-mode lateral MOSFETs LET9070FB
PowerSO-10RF: the first true RF power SMD package PD54003-E