STD7NS20:N-channel 200 V, 0.35 Ohm typ., 7 A Power MOSFET in DPAK package
Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of Power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company's proprietary edge termination structure, makes it suitable in coverters for lighting applications.
Key Features
- Typical RDS
(on) = 0.35
- 100% avalanche tested
- Extremely high dv/dt capability
- Add suffix \"T4\" for ordering in tape & reel
- Very low intrinsic capacitances
产品规格
应用手册
用户手册
手册
Software Development Tools
型号 | 制造商 | Description |
---|
ST-MOSFET-FINDER | ST | MOSFET product finder application for Android and iOS |
样片和购买
型号 | Package | Packing Type | Unit Price (US$)
* | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
---|
STD7NS20T4 | DPAK | Tape And Reel | - | - | NEC | EAR99 | CHINA |
质量和可靠性