ADR435 Ultralow Noise XFET Voltage References with Current Sink and Source Capability

The ADR43x series is a family of XFET voltage references featuring low noise, high accuracy, and low temperature drift performance. Using Analog Devices, Inc., patented temperature drift curvature correction and XFET (eXtra implanted junction FET) technology, voltage change vs. temperature nonlinearity in the ADR43x is minimized. Applications

The XFET references operate at lower current (800 µA) and supply headroom (2 V) than buried Zener references. Buried Zener references require more than 5 V headroom for operations. The ADR43x XFET references are the only low noise solutions for 5 V systems.

The ADR43x family has the capability to source up to 30 mA of output current and sink up to 20 mA. It also comes with a trim terminal to adjust the output voltage over a 0.5% range without compromising performance.

The ADR43x is available in 8-lead MSOP and narrow SOIC packages. All versions are specified over the extended industrial temperature range of −40°C to +125°C.

The ADR435-EP Supports defense and aerospace applications (AQEC standard)

Features and Benefits
  • Low noise (0.1 Hz to 10.0 Hz): 3.5 µV p-p at 2.5 V output
  • No external capacitor required
  • Low temperature coefficient
    • A Grade: 10 ppm/°C maximum
    • B Grade: 3 ppm/°C maximum
  • A Grade: 10 ppm/°C maximum
  • B Grade: 3 ppm/°C maximum
  • Load regulation: 15 ppm/mA
  • Line regulation: 20 ppm/V
  • Wide operating range: 7.0 V to 18 V
  • See data sheet for additional features
  • Download ADR431-EP/ADR434-EP/ADR435-EP data sheet (pdf)
  • Military temperature range (−55°C to +125°C)
  • Controlled manufacturing baseline
  • One assembly/test site
  • One fabrication site
  • Enhanced product change notification
  • Qualification data available on request
  • V62/11602 DSCC Drawing Number
  • Linear Products
    Reference Designs
    Data Sheets
    Documentnote
    ADR430/ADR431/ADR433/ADR434/ADR435: Ultralow Noise XFET Voltage References with Current Sink and Source Capability Data Sheet (Rev. M)PDF 1088 kB
    ADR431/ADR434/ADR435-DSCC: Military Data Sheet
    ADR431-EP/ADR434-EP/ADR435-EP: Enhanced Product Data Sheet (Rev. A)PDF 145 kB
    Application Notes
    Documentnote
    AN-713: The Effect of Long-Term Drift on Voltage References (Rev. 0)PDF 237 kB
    Product Highlight
    Documentnote
    Frequently Asked Questions
    Documentnote
    Order Information
    Part NumberPackagePacking QtyTemp RangePrice 100-499Price 1000+RoHS
    ADR435ARMZ Production8 ld MSOPOTH 50-40 to 125C3.182.96Y
    ADR435ARMZ-REEL7 Production8 ld MSOPREEL 1000-40 to 125C02.96Y
    ADR435ARZ Production8 ld SOICOTH 98-40 to 125C3.182.96Y
    ADR435ARZ-REEL7 Production8 ld SOICREEL 1000-40 to 125C02.96Y
    ADR435BRMZ Production8 ld MSOPOTH 50-40 to 125C4.744.41Y
    ADR435BRMZ-R7 Production8 ld MSOPREEL 1000-40 to 125C04.41Y
    ADR435BRZ Production8 ld SOICOTH 98-40 to 125C4.744.41Y
    ADR435BRZ-REEL7 Production8 ld SOICREEL 1000-40 to 125C04.41Y
    ADR435TRZ-EP Production8 ld SOICOTH 98-55 to 125C7.116.62Y
    ADR435TRZ-EP-R7 Production8 ld SOICREEL 1000-55 to 125C06.62Y
    Reference Materials
    ADR430/ADR431/ADR433/ADR434/ADR435: Ultralow Noise XFET Voltage References with Current Sink and Source Capability Data Sheet (Rev. M) adr430
    ADR431-EP/ADR434-EP/ADR435-EP: Enhanced Product Data Sheet (Rev. A) adr431
    CN0374 设计与集成文件 ada4940-2
    CN0306 设计和集成文件 adr435
    CN0305 设计和集成文件 adr435
    CN0261 设计和集成文件 adr435
    CN0240 设计和集成文件 ad8475
    CN0180 设计和集成文件 ad8475
    ADR431/ADR434/ADR435-DSCC: Military Data Sheet adr431
    AN-713: The Effect of Long-Term Drift on Voltage References (Rev. 0) ad580
    CN0374:RF至位解决方案可提供6 GHz信号的精密相位和幅度数据 ada4940-2
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