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LTC4446 - High Voltage High Side / Low Side N-Channel MOSFET Driver

The LTC4446 is a high frequency high voltage gate driver that drives two N-channel MOSFETs in a DC/DC converter with supply voltages up to 100V. The powerful driver capability reduces switching losses in MOSFETs with high gate capacitance. The LTC4446’s pull-up for the top gate driver has a peak output current of 2.5A and its pull-down has an output impedance of 1.2Ω. The pull-up for the bot- tom gate driver has a peak output current of 3A and the pull-down has an output impedance of 0.55Ω. The LTC4446 is configured for two supply-independent inputs. The high side input logic signal is internally level-shifted to the bootstrapped supply, which may function at up to 114V above ground. The LTC4446 contains undervoltage lockout circuits that disable the external MOSFETs when activated. The LTC4446 is available in the thermally enhanced 8-lead MSOP package. The LTC4446 does not have adaptive shoot-through protection. For similar drivers with adaptive shoot-through protection, please refer to the chart below. PARAMETER LTC4446 LTC4444 LTC4444-5 Shoot-Through Protection No Yes Yes Absolute Max TS 100V 100V 100V MOSFET Gate Drive 7.2V to 13.5V 7.2V to 13.5V 4.5V to 13.5V VCC UV+ 6.6V 6.6V 4V VCC UV– 6.15V 6.15V 3.5V

Features Bootstrap Supply Voltage Up to 114V Wide VCC Voltage: 7.2V to 13.5V 2.5A Peak Top Gate Pull-Up Current 3A Peak Bottom Gate Pull-Up Current 1.2Ω Top Gate Driver Pull-Down 0.55Ω Bottom Gate Driver Pull-Down 5ns Top Gate Fall Time Driving 1nF Load 8ns Top Gate Rise Time Driving 1nF Load 3ns Bottom Gate Fall Time Driving 1nF Load 6ns Bottom Gate Rise Time Driving 1nF Load Drives Both High and Low Side N-Channel MOSFETs Undervoltage Lockout Thermally Enhanced 8-Pin MSOP Package Typical Application

Applications Distributed Power Architectures Automotive Power Supplies High Density Power Modules Telecommunication Systems Packaging