Name/Description | Modified Date |
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MW7IC008NT1 100-1000 MHz, 8 W Peak, 28 V RF LDMOS Wideband Integrated Power Amplifier - Data Sheet (REV 3) PDF (337.2 kB) MW7IC008N | 19 Dec 2013 |
Name/Description | Modified Date |
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AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 | 29 Apr 2014 |
PCB Layout Guidelines for PQFN/QFN Style Packages Requiring Thermal Vias for Heat Dissipation - AN3778 (REV 0) PDF (632.0 kB) AN3778 | 26 Feb 2010 |
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 (REV 1) PDF (111.6 kB) AN1987 | 12 May 2004 |
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 (REV 0) PDF (112.8 kB) AN1977 | 09 Oct 2003 |
Name/Description | Modified Date |
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Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 | 19 Jan 2004 |
Name/Description | Modified Date |
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RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 | 26 May 2016 |
Name/Description | Modified Date |
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98ASA10760D, PQFN-EP, 8.0x8.0x2.1, Pitch 0.8, 24 Pins (REV B) PDF (44.4 kB) 98ASA10760D | 21 Mar 2016 |
Product | Status | Status | Frequency Min (Min) (MHz) | Frequency Max (Max) (MHz) | Supply Voltage (Typ) (V) | P1dB (Typ) (dBm) | P1dB (Typ) (W) | Output Power (Typ) (W) @ Intermodulation Level at Test Signal | Test Signal | Power Gain (Typ) (dB) @ f (MHz) | Efficiency (Typ) (%) | Thermal Resistance (Spec)(°C/W) | Matching | Class | Die Technology |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
MW7IC008NT1 | Active | 100 | 1000 | 28 | 38.1 | 6.5 | 6.5 @ CW | 1-Tone | 23.5 @ 900 | 34 | 3.2 | I/O | AB | LDMOS |
Package Description | Outline Version | Packing | Product Status | Part Number | Chemical Content | RoHS / Pb FreeChina RoHS Lookup | MSL | PPT (°C) |
---|---|---|---|---|---|---|---|---|
PWR QFN 24 8*8*2.1P0.8 | 98ASA10760D | MPQ - 1000 REELPOQ - 1000 BOX | Active | MW7IC008NT1 | MW7IC008NT1.pdf | 3 | 260 |