AFT09S200W02S: 920-960 MHz, 56 W Avg., 28 V Airfast® RF Power LDMOS Transistor
NI-780S-2 Package Image
特性
- Designed for Wide Instantaneous Bandwidth Applications
- Greater Negative Gate-Source Voltage Range for Improved Class C Operation
- Designed for Digital Predistortion Error Correction Systems
- Able to Withstand Extremely High Output VSWR and Broadband Operating Conditions
- Optimized for Doherty Applications
- RoHS Compliant
Data Sheets (1)
| Name/Description | Modified Date |
|---|---|
| AFT09S200W02SR3 920-960 MHz, 56 W Avg., 28 V Airfast® RF Power LDMOS Transistor Data Sheet (REV 0) PDF (533.8 kB) AFT09S200W02S | 23 Apr 2015 |
Application Notes (1)
| Name/Description | Modified Date |
|---|---|
| AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 | 29 Apr 2014 |
Engineering Bulletins (1)
| Name/Description | Modified Date |
|---|---|
| Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 | 19 Jan 2004 |
Selector Guides (1)
| Name/Description | Modified Date |
|---|---|
| RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 | 26 May 2016 |
Package Information (1)
| Name/Description | Modified Date |
|---|---|
| 98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins (REV J) PDF (43.5 kB) 98ASB16718C | 22 Mar 2016 |
Ordering Information
| Product | Status | Status | Frequency Min (Min) (MHz) | Frequency Max (Max) (MHz) | Supply Voltage (Typ) (V) | P1dB (Typ) (dBm) | P1dB (Typ) (W) | Output Power (Typ) (W) @ Intermodulation Level at Test Signal | Test Signal | Power Gain (Typ) (dB) @ f (MHz) | Efficiency (Typ) (%) | Thermal Resistance (Spec)(°C/W) | Matching | Class | Die Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| AFT09S200W02SR3 | Active | 920 | 960 | 28 | 51.7 | 148 | 56 @ AVG | W-CDMA | 19.4 @ 960 | 35.6 | 0.34 | I/O | AB | LDMOS |
Package Information
| Package Description | Outline Version | Packing | Product Status | Part Number | Chemical Content | RoHS / Pb FreeChina RoHS Lookup | PPT (°C) |
|---|---|---|---|---|---|---|---|
| NI-780S | 98ASB16718C | MPQ - 250 REELPOQ - 250 REEL | Active | AFT09S200W02SR3 | AFT09S200W02SR3.pdf |   | 260 |
- AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
- Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
- RF Products Selector Guide MMT20303H
- 98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins MMRF1011H
- AFT09S200W02SR3.pdf AFT09S200W02S
