LET9180：180W 32V Wideband LDMOS TRANSISTOR
The LET9180 is a common source n-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 2 GHz.
Key Features
- Excellent thermal stability
- Common source configuration push-pull
- POUT
= 180 W with 19 dB gain @ 860 MHz
- BeO-free package
Product Specifications
Application Notes
Software Development Tools
| Part Number | Manufacturer | Description |
|---|
| STSW-RFMOS001 | ST | Mismatch analysis for RF transistor circuits based on Agilent ADS |
| STSW-RFMOS002 | ST | Large signal load stability for RF transistors based on Agilnet ADS |
Sample & Buy
| Part Number | Quantity | Unit Price (US$)
* | Package | Packing Type | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| LET9180 | - | - | M246 | Loose Piece | NEC | EAR99 | MOROCCO |
Quality & Reliability
| Part Number | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|
| LET9180 | M246 | Industrial | Ecopack1 | |
