SCT10N120：Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative
properties of wide bandgap materials. This results in unsurpassed on-resistance per unit
area and very good switching performance almost independent of temperature. The
outstanding thermal properties of the SiC material, combined with the device’s housing
in the proprietary HiP247™ package, allows designers to use an industry-standard outline
with significantly improved thermal capability. These features render the device
perfectly suitable for high-efficiency and high power density applications.
Key Features
- Very tight variation of on-resistance vs. temperature
- Slight variation of switching losses vs. temperature
- Very high operating temperature capability (TJ
=200 °C)
- Very fast and robust intrinsic body diode
- Low capacitance
Product Specifications
Application Notes
Technical Notes & Articles
User Manuals
Flyers
Brochures
Conference Papers
Sample & Buy
| Part Number | Package | Packing Type | Unit Price (US$)
* | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| SCT10N120 | HiP247 IN LINE | Tube | 8 | 1000 | NEC | EAR99 | CHINA |
Quality & Reliability
| Part Number | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|
| SCT10N120 | HiP247 IN LINE | Industrial | Ecopack2 | |
