| SCT10N120 | Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package | Active | 12 | 22 | 150 | HiP247 IN LINE | 200 | 1200 | 0.69 | Industrial |
| SCT20N120 | Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package | Active | 20 | 45 | 175 | HiP247 IN LINE | 200 | 1200 | 0.239 | Industrial |
| SCT50N120 | Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C) in an HiP247 package | Active | 65 | 122 | 318 | HiP247 IN LINE | 200 | 1200 | 0.069 | Industrial |
| SCTW100N65G2AG | Automotive silicon carbide Power MOSFET 650 V, 100 A, 22 mOhm (typ. TJ = 150 C) in an HiP247 package | Preview | 100 | 215 | 390 | HiP247 IN LINE | 200 | 650 | Automotive |
| SCT30N120 | Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an HiP247 package | Active | 45 | 105 | 270 | HiP247 IN LINE | 200 | 1200 | 0.1 | Industrial |
| SCTWA50N120 | Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C) in an HiP247 long leads package | Active | 65 | 122 | 318 | HIP247 LONG LEADS | 200 | 1200 | 0.069 | Industrial |
