SCT20N120：Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247™ package, allows designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.
Key Features
- Very tight variation of on-resistance vs. temperature
- Slight variation of switching losses vs. temperature
- Very high operating temperature capability (200 °C)
- Very fast and robust intrinsic body diode
- Low capacitance
- Easy to drive
Product Specifications
Application Notes
Technical Notes & Articles
User Manuals
HW Model & CAD Libraries
Flyers
Brochures
Conference Papers
Sample & Buy
| Part Number | Package | Packing Type | Unit Price (US$)
* | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| SCT20N120 | HiP247 IN LINE | Tube | 10.5 | 1000 | NEC | EAR99 | CHINA |
Quality & Reliability
