SCTW100N65G2AG：Automotive silicon carbide Power MOSFET 650 V, 100 A, 22 mOhm (typ. TJ = 150 C) in an HiP247 package
This silicon carbide Power MOSFET device has been developed using ST’s advanced and
innovative 2nd generation SiC MOSFET technology. The main features of this
product include remarkably low on-resistance per unit area and very good switching
performance. The variation of both RDS(on) and switching losses are almost
independent from junction temperature.
Key Features
- Designed for automotive applications
- Tight variation of on-resistance vs. temperature
- Very fast and robust intrinsic body diode
- Very high operating temperature capability (TJ
= 200 °C)
- Low capacitance
Product Specifications
Application Notes
Technical Notes & Articles
User Manuals
Flyers
Brochures
Conference Papers
Sample & Buy
| Part Number | Package | Packing Type | Unit Price (US$)
* | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| SCTW100N65G2AG | HiP247 IN LINE | Tube | - | - | NEC | EAR99 | - |
Quality & Reliability
| Part Number | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|
| SCTW100N65G2AG | HiP247 IN LINE | Automotive | Ecopack2 | |
