ST13007D：HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability.

It uses a Cellular Emitter structure to enhance switching speeds.

Key Features

FULLY CHARACTERIZED AT 125 °C
VERY HIGH SWITCHING SPEED
IMPROVED SPECIFICATION: LOWER LEAKAGE CURRENT TIGHTER GAIN RANGE DC CURRENT GAIN PRESELECTIONTIGHTER STORAGE TIME RANGE
INTEGRATED FREE-WHEELING DIODE
HIGH VOLTAGE CAPABILITY
MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION
LARGE RBSOA
LOW SPREAD OF DYNAMIC PARAMETERS

Description	Version	Size
DS2303: High voltage fast-switching NPN power transistor	3.3	214 KB

Part Number	Package	Packing Type	Unit Price (US$) *	Quantity	ECCN (EU)	ECCN (US)	Country of Origin
ST13007D	TO-220AB	Tube	0.27	500	NEC	EAR99	CHINA

Part Number	Package	Grade	RoHS Compliance Grade	Material Declaration**
ST13007D	TO-220AB	Industrial	Ecopack2