STR1P2UH7：P-channel 20 V, 0.087 Ohm typ., 1.4 A STripFET H7 Power MOSFET in a SOT-23 package
This P-channel Power MOSFET utilizes the STripFET H7 technology with a trench gate structure combined with extremely low on-resistance. The device also offers ultra-low capacitances for higher switching frequency operations.
Key Features
- Very low on-resistance
- Very low capacitance and gate charge
- High avalanche ruggedness
Product Specifications
Application Notes
User Manuals
HW Model & CAD Libraries
Brochures
Software Development Tools
| Part Number | Manufacturer | Description |
|---|
| ST-MOSFET-FINDER | ST | MOSFET product finder application for Android and iOS |
Sample & Buy
| Part Number | Package | Packing Type | Unit Price (US$)
* | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| STR1P2UH7 | SOT-23 | Tape And Reel | 0.2 | 1000 | NEC | EAR99 | CHINA |
Quality & Reliability
