PD85006L-E:6W 13.6V 870MHz LDMOS in PowerFLAT plastic package

The PD85006L-E is a common source N-channel, enhancement-mode lateral Field- Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz.

PD85006L-E boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in leadless SMD plastic RF power package , PowerFLAT™. PD85006L-E’s superior linearity performance makes it an ideal solution for mobile radio applications.

Key Features

  • In compliance with the 2002/95/EC european directive
  • Excellent thermal stability
  • POUT = 6 W with 15 dB gain @ 870 MHz / 13.6 V
  • Common source configuration
  • ESD protection
  • Plastic package
产品规格
DescriptionVersionSize
DS5620: RF power transistor the LdmoST plastic family1.2554 KB
用户手册
DescriptionVersionSize
UM0890: 2-stage RF power amplifier with LPF based on the PD85006L-E and STAP85050 RF power transistors1.1436 KB
HW Model & CAD Libraries
DescriptionVersionSize
PD85006L-E ADS model1.0345 KB
Software Development Tools
型号制造商Description
STSW-RFMOS001STMismatch analysis for RF transistor circuits based on Agilent ADS
STSW-RFMOS002STLarge signal load stability for RF transistors based on Agilnet ADS
Product Evaluation Tools
型号制造商Description
STEVAL-TDR034V1RF power module based on the PD85050S for mobile radio applications
样片和购买
型号PackagePacking TypeUnit Price (US$) *QuantityECCN (EU)ECCN (US)Country of Origin
PD85006L-EPowerFLAT 5x5 HVTape And Reel--NECEAR99MALAYSIA
质量和可靠性
型号PackageGradeRoHS Compliance GradeMaterial Declaration**
PD85006L-EPowerFLAT 5x5 HVIndustrialEcopack2
RF power transistor the LdmoST plastic family PD85006L-E
2-stage RF power amplifier with LPF based on the PD85006L-E and STAP85050 RF power transistors PD85006L-E
2-stage RF power amplifier with LPF based on the PD85006L-E and STAP85050 RF power transistors PD85006L-E